PSMN017-30EL,127 NXP Semiconductors, PSMN017-30EL,127 Datasheet - Page 11
PSMN017-30EL,127
Manufacturer Part Number
PSMN017-30EL,127
Description
MOSFET N-chan 30 V 17 mohm MOSFET in I2PAK
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN017-30EL127.pdf
(14 pages)
Specifications of PSMN017-30EL,127
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
32 A
Resistance Drain-source Rds (on)
17 mOhms
Mounting Style
Through Hole
Package / Case
I2PAK
Power Dissipation
47 W
Factory Pack Quantity
50
NXP Semiconductors
8. Revision history
Table 7.
PSMN017-30EL
Product data sheet
Document ID
PSMN017-30EL v.2
Modifications:
PSMN017-30EL v.1
Revision history
20120228
Release date
20120403
•
•
Status changed from objective to product.
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Objective data sheet
Data sheet status
Product data sheet
Rev. 2 — 3 April 2012
N-channel 30 V 17 mΩ logic level MOSFET in I2PAK
Change notice
-
-
PSMN017-30EL
Supersedes
PSMN017-30EL v.1
-
© NXP B.V. 2012. All rights reserved.
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