ZXGD3104N8TC Diodes Inc. / Zetex, ZXGD3104N8TC Datasheet - Page 11

• Manufacturer Part Number: ZXGD3104N8TC
• Description: MOSFET Synch MOSFET Control SO-8 T&R 2.5K
• Manufacturer: Diodes Inc. / Zetex

Specifications of ZXGD3104N8TC

• Rohs: yes

Design considerations
It is advisable to decouple the ZXGD3104 closely to V
with a 1μF X7R type ceramic capacitor C1 as shown in Figure 2. Also the ground return loop should be as short as
possible.
To minimize parasitic inductance-induced premature turn-off of the synchronous controller always keep the PCB
track length between ZXGD3104’s Drain input and MOSFET’s Drain to less than 10mm. Low internal inductance
SMD MOSFET packages are also recommended for high switching frequency power conversion to minimize
MOSFET body diode conduction loss.
The Gate pins should be as close to the MOSFET’s gate as possible. External gate resistors are optional. They can
be inserted to control the rise and fall time which may help with EMI issues.
The careful selection of external resistors R
for resistor R
detection threshold voltage of -10mV.
ZXGD3104N8
Document Number DS35546
REF
Table 1. Recommended resistor values for various supply voltages
and R
Rev. 1 – 2
BIAS
from Table 1 based on the desired Vcc value. This provides the typical ZXGD3104’s
V
10V
12V
15V
19V
5V
CC
REF
and R
www.diodes.com
BIAS
CC
11 of 13
1.6
3.3
3.9
5.1
6.3
R
is important to the optimum device operation. Select a value
and ground due to the possibility of high peak gate currents
BIAS
kΩ
kΩ
kΩ
kΩ
kΩ
4.3
5.1
6.8
8.5
R
2
Diodes Incorporated
REF
kΩ
kΩ
kΩ
kΩ
kΩ
A Product Line of
ZXGD3104N8
© Diodes Incorporated
November 2011