SSM6J08FUTE85LF Toshiba, SSM6J08FUTE85LF Datasheet - Page 3

• Manufacturer Part Number: SSM6J08FUTE85LF
• Description: MOSFET Vds=-20V Id=-1.3A 6Pin
• Manufacturer: Toshiba

Specifications of SSM6J08FUTE85LF

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 1.3 A
• Resistance Drain-source Rds (on): 140 mOhms
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: ES-6
• Power Dissipation: 300 mW
• Factory Pack Quantity: 3000

−3.0
−2.5
−2.0
−1.5
−1.0
−0.5
1.0
0.8
0.6
0.4
0.2
0.5
0.4
0.3
0.2
0.1
−25
0
0
0
0
0
Common Source
Ta = 25°C
Common Source
I D = −0.65 A
−10
−0.5
0
Drain-Source voltage V DS (V)
−4.0
Ambient temperature Ta (°C)
−0.5
25
Drain current I D (A)
−1.0
−2.5
R
R
DS (ON)
DS (ON)
I
50
D
– V
−1.0
−1.5
V GS = −2 V
DS
75
– Ta
– I
−2.0
−2.5
−4
D
−2.0
V GS = −2 V
V GS = −1.4 V
Common Source
Ta = 25°C
100
−1.5
−1.8
−1.6
−2.5
125
−2.5
−4
−2.0
−3.0
150
3
−10000
−1000
−0.01
−100
−0.1
0.01
−10
1.0
0.8
0.6
0.4
0.2
0.1
−1
10
−0.01
0
1
0
0
Common Source
V DS = −3 V
−2
−0.5
Gate-Source voltage V GS (V)
Gate-Source voltage V GS (V)
Drain current I D (A)
−0.1
−4
R
DS (ON)
−1.0
100°C
I
|Y
D
−25°C
fs
– V
−6
| – I
GS
– V
−1.5
D
Ta = 25°C
GS
−8
−1
Common Source
V DS = −3 V
Ta = 25°C
Common Source
I D = −0.65 A
Ta = 25°C
−2.0
SSM6J08FU
−10
2007-11-01
−2.5
−12
−10