SSM6J08FUTE85LF Toshiba, SSM6J08FUTE85LF Datasheet - Page 2

• Manufacturer Part Number: SSM6J08FUTE85LF
• Description: MOSFET Vds=-20V Id=-1.3A 6Pin
• Manufacturer: Toshiba

Specifications of SSM6J08FUTE85LF

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 1.3 A
• Resistance Drain-source Rds (on): 140 mOhms
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: ES-6
• Power Dissipation: 300 mW
• Factory Pack Quantity: 3000

Electrical Characteristics
Precaution
Switching Time Test Circuit
Gate leakage current
Drain-Source breakdown voltage
Drain Cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Note 3: Pulse test
(a) Test circuit
for this product. For normal switching operation, V
requires lower voltage than V
V
(relationship can be established as follows: V
Please take this into consideration for using the device.
th
−2.5 V
can be expressed as voltage between gate and source when low operating current value is I
0
Characteristics
V
R
D.U. < = 1%
V
COMMON SOURCE
Ta = 25°C
DD
IN
G
10 μs
: t
= 4.7 Ω
= −10 V
r
, t
f
Turn-on time
Turn-off time
< 5 ns
IN
R
G
th
I
(Ta = 25°C)
D
.
V
V
R
Symbol
V
(BR) DSS
(BR) DSX
DS (ON)
⏐Y
OUT
I
I
C
C
DD
C
GSS
DSS
V
t
t
oss
on
off
rss
iss
th
fs
⏐
V
I
I
V
V
V
I
I
I
V
V
V
V
V
D
D
D
D
D
GS (off)
(b) V
(c) V
GS
DS
DS
DS
DS
DS
DS
DD
GS
= −1 mA, V
= −1 mA, V
= −0.65 A, V
= −0.65 A, V
= −0.65 A, V
= −20 V, V
= −3 V, I
= −3 V, I
= −10 V, V
= −10 V, V
= −10 V, V
= ±12 V, V
= −10 V, I
= 0~−2.5 V, R
GS (on)
2
OUT
IN
< V
Test Condition
D
D
th
GS
GS
requires higher voltage than V
D
GS
GS
GS
GS
= −0.1 mA
= −0.65 A
GS
GS
GS
DS
< V
= −0.65 A,
= 0
= 12 V
= −4 V
= −2.5 V
= −2.0 V
= 0
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
G
GS (on)
= 4.7 Ω
V
DS (ON)
−2.5 V
)
V
0 V
(Note 3)
(Note 3)
(Note 3)
(Note 3)
DD
−0.5
Min
−20
1.3
−8
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
10%
t
on
t
r
10%
th
Typ.
90%
140
200
260
370
116
2.7
73
33
47
⎯
⎯
⎯
⎯
⎯
and V
SSM6J08FU
90%
t
2007-11-01
D
off
GS (off)
−1.1
Max
180
260
460
t
±1
−1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
f
= −100 μA
Unit
mΩ
μA
μA
pF
pF
pF
ns
ns
V
V
S