BYQ28EB-100/81 Vishay Semiconductors, BYQ28EB-100/81 Datasheet - Page 3

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BYQ28EB-100/81

Manufacturer Part Number
BYQ28EB-100/81
Description
Rectifiers 100 Volt 10A 20ns Dual Common Cathode
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of BYQ28EB-100/81

Product Category
Rectifiers
Product
Ultra Fast Recovery Rectifiers
Configuration
Dual Common Cathode
Reverse Voltage
100 V
Forward Voltage Drop
1.25 V
Recovery Time
25 ns
Forward Continuous Current
10 A
Max Surge Current
55 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Package / Case
TO-263AB
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88549
Revision: 07-Jan-08
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
A
= 25 °C unless otherwise noted)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
0.01
100
100
0.1
15
10
10
10
5
0
1
1
0.2
0
1
Pulse Width = 300 µs
1 % Duty Cycle
Figure 1. Forward Current Derating Curve
Resistive or Inductive Load
0.4
Instantaneous Forward Voltage (V)
T
J
Number of Cycles at 60 Hz
= 125 °C
Case Temperature (°C)
BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCT
Current Per Diode
50
0.6
T
T
8.3 ms Single Half Sine-Wave
J
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
C
= 25 °C
For technical questions within your region, please contact one of the following:
0.8
= 105 °C
10
T
J
= 100 °C
100
1.0
1.2
150
100
1.4
1000
Figure 5. Reverse Switching Characteristics Per Diode
100
100
0.1
10
10
Figure 4. Typical Reverse Characteristics Per Diode
50
40
30
20
10
0
1
1
Figure 6. Typical Junction Capacitance Per Diode
25
0.1
0
at 1 A, 100 A/µs
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
at 5 A, 50 A/µs
at 2 A, 20 A/µs
20
at 2 A, 20 A/µs
50
Junction Temperature (°C)
Reverse Voltage (V)
1
40
T
J
at 5 A, 50 A/µs
= 125 °C
T
J
at 1 A, 100 A/µs
75
T
= 100 °C
J
= 25 °C
60
10
T
f = 1.0 MHz
V
J
100
sig
= 125 °C
= 50 mVp-p
80
www.vishay.com
t
Q
rr
rr
100
125
100
3

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