IPB042N10N3GE818XT Infineon Technologies, IPB042N10N3GE818XT Datasheet
IPB042N10N3GE818XT
Specifications of IPB042N10N3GE818XT
Related parts for IPB042N10N3GE818XT
IPB042N10N3GE818XT Summary of contents
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Power-Transistor Features R R Type Package Marking Maximum ratings, T Parameter IPB042N10N3 G Product Summary Symbol Conditions IPI045N10N3 G IPP045N10N3 G Value Unit ...
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Parameter Thermal characteristics Electrical characteristics, T Static characteristics IPB042N10N3 G Symbol Conditions ...
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Parameter Dynamic characteristics Reverse Diode IPB042N10N3 G Symbol Conditions ...
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Power dissipation P T 250 200 150 100 100 T [° Safe operating area ...
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Typ. output characteristics 400 320 240 160 [ Typ. transfer characteristics 200 150 100 [V] ...
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Drain-source on-state resistance -60 - [° Typ. capacitances ...
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Avalanche characteristics 1000 100 [µ Drain-source breakdown voltage 110 105 100 95 90 -60 - [° Typ. gate charge V ...
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PG-TO220-3: Outline IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G ...
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PG-TO262-3 IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G ...
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PG-TO-263 (D²-Pak) IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...