VS-FA38SA50LCP Vishay Semiconductors, VS-FA38SA50LCP Datasheet - Page 6

• Manufacturer Part Number: VS-FA38SA50LCP
• Description: MOSFET N-Chan 500V 38 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-FA38SA50LCP

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 38 A
• Resistance Drain-source Rds (on): 0.13 Ohms
• Configuration: Single Dual Source
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-227
• Fall Time: 330 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 W
• Rise Time: 340 ns
• Factory Pack Quantity: 180
• Typical Turn-off Delay Time: 200 ns

FA38SA50LCP
Vishay Semiconductors
www.vishay.com
6
Re-Applied
Voltage
[e-mail], [e-mail],
Reverse
Recovery
Current
For technical questions within your region, please contact one of the following:
1
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
+
2
-
GS
R
D.U.T.
G
= 5V for Logic Level Devices
P.W.
SD
Fig. 17 - Peak Diode Recovery dV/dt Test Circuit
DS
Waveform
Waveform
Fig. 18 - For N-Channel Power MOSFETs
Power MOSFET, 38 A
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
3
+
-
Diode Recovery
Current
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - Device under test
SD
dv/dt
Forward Drop
controlled by duty factor "D"
di/dt
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
D =
-
Period
G
P.W.
[e-mail]
4
+
V
V
I
SD
GS
DD
=10V
+
-
V
*
DD
Document Number: 94547
Revision: 11-May-10