VS-FA38SA50LCP Vishay Semiconductors, VS-FA38SA50LCP Datasheet - Page 5

• Manufacturer Part Number: VS-FA38SA50LCP
• Description: MOSFET N-Chan 500V 38 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-FA38SA50LCP

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 38 A
• Resistance Drain-source Rds (on): 0.13 Ohms
• Configuration: Single Dual Source
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-227
• Fall Time: 330 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 W
• Rise Time: 340 ns
• Factory Pack Quantity: 180
• Typical Turn-off Delay Time: 200 ns

Document Number: 94547
Revision: 11-May-10
Fig. 14 - Unclamped Inductive Test Circuit
20 V
R
G
V
DS
0.001
0.01
t
0.1
p
0.00001
1
I
AS
D.U.T
0.50
0.20
0.10
0.05
0.02
0.01
0.01
L
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Fig. 13 - Maximum Effective Transient Thermal Impedance, Junction to Case
(THERMAL RESPONSE)
0.0001
15 V
SINGLE PULSE
Fig. 16 - Maximum Avalanche Energy vs. Drain Current
Driver
1200
1000
800
600
400
200
0
+
-
25
V
DD
Starting T , Junction Temperature ( C)
Power MOSFET, 38 A
t , Rectangular Pulse Duration (sec)
A
1
50
0.001
J
75
100
TOP
BOTTOM
0.01
125
1. Duty factor D = t / t
2. Peak T = P
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Notes:
I
AS
Fig. 15 - Unclamped Inductive Waveforms
°
I D
17A
24A
38A
J
150
DM
x Z
1
0.1
thJC
Vishay Semiconductors
P
2
DM
t p
+ T
C
t
1
t
2
FA38SA50LCP
V
1
(BR)DSS
www.vishay.com
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