ZXMP3F36N8TA Diodes Inc. / Zetex, ZXMP3F36N8TA Datasheet - Page 6

• Manufacturer Part Number: ZXMP3F36N8TA
• Description: MOSFET 30V P-CHANNEL ENHANCEMENT MODE
• Manufacturer: Diodes Inc. / Zetex

Specifications of ZXMP3F36N8TA

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.6 A
• Resistance Drain-source Rds (on): 0.02 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 40 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.8 W
• Rise Time: 5 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 75 ns

Typical characteristics
Test circuits
Issue 1 - August 2008
© Diodes Incorporated 2008
Capacitance v Drain-Source Voltage
3000
2500
2000
1500
1000
500
0
-V
C
ISS
DS
- Drain - Source Voltage (V)
1
C
OSS
C
RSS
10
V
f = 1MHz
GS
= 0V
6
Gate-Source Voltage v Gate Charge
10
9
8
7
6
5
4
3
2
1
0
0
I
D
= 10A
5
10
Q - Charge (nC)
15
20
25
ZXMP3F36N8
www.diodes.com
30
V
www.zetex.com
DS
= 15V
35
40
45