ZXMP3F36N8TA Diodes Inc. / Zetex, ZXMP3F36N8TA Datasheet - Page 3

• Manufacturer Part Number: ZXMP3F36N8TA
• Description: MOSFET 30V P-CHANNEL ENHANCEMENT MODE
• Manufacturer: Diodes Inc. / Zetex

Specifications of ZXMP3F36N8TA

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.6 A
• Resistance Drain-source Rds (on): 0.02 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 40 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.8 W
• Rise Time: 5 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 75 ns

Thermal characteristics
Issue 1 - August 2008
© Diodes Incorporated 2008
100m
10m
100
1m
80
70
60
50
40
30
20
10
10
100m
100µ
0
1
Transient Thermal Impedance
R
Limited
DS(on)
D=0.5
D=0.2
Single Pulse
T
-V
T
1m
DC
Safe Operating Area
amb
amb
DS
=25°C
=25°C
1s
10m 100m
Drain-Source Voltage (V)
Pulse Width (s)
100ms
1
10ms
D=0.1
1
1ms
D=0.05
100µs
10
Single Pulse
10
100
1k
3
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
100µ
1
0
20
Pulse Power Dissipation
1m
40
Temperature (°C)
10m 100m
Derating Curve
Pulse Width (s)
60
80
100 120 140 160
1
ZXMP3F36N8
25mm x 25mm
Single Pulse
10
1oz FR4
T
www.diodes.com
amb
www.zetex.com
=25°C
100
1k