SFT1341-E ON Semiconductor, SFT1341-E Datasheet - Page 2

• Manufacturer Part Number: SFT1341-E
• Description: MOSFET PCH 1.8V DRIVE SERIES
• Manufacturer: ON Semiconductor

Specifications of SFT1341-E

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 40 V
• Continuous Drain Current: - 10 A
• Resistance Drain-source Rds (on): 112 mOhms
• Mounting Style: Through Hole
• Package / Case: TO-251
• Power Dissipation: 1 W

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Ordering Information
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
SFT1341-E
SFT1341-TL-E
--4.5V
P.G
0V
PW=10μs
D.C.≤1%
V IN
Device
Parameter
V IN
G
50Ω
V DD = --20V
D
S
I D = --5A
R L =4Ω
SFT1341
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
V OUT
Package
TP-FA
TP
I D =--1mA, V GS =0V
V DS =--40V, V GS =0V
V GS =±8V, V DS =0V
V DS =--10V, I D =--1mA
V DS =--10V, I D =--5A
I D =--5A, V GS =--4.5V
I D =--5A, V GS =- -2.5V
I D =--2.5A, V GS =--1.8V
V DS =--20V, f=1MHz
See specifi ed Test Circuit.
V DS =--20V, V GS =--4.5V, I D =--10A
I S =--10A, V GS =0V
SFT1341
Conditions
500pcs./bag
700pcs./reel
Shipping
min
--0.4
--40
4.6
Ratings
typ
Pb Free
memo
--1.0
650
110
140
7.7
9.0
8.0
1.4
2.5
86
65
50
50
81
80
max
--1.4
--1.5
±10
112
154
210
--1
No. A1444-2/9
Unit
mΩ
mΩ
mΩ
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V
V