SFT1341-E ON Semiconductor, SFT1341-E Datasheet

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SFT1341-E

Manufacturer Part Number
SFT1341-E
Description
MOSFET PCH 1.8V DRIVE SERIES
Manufacturer
ON Semiconductor
Datasheet

Specifications of SFT1341-E

Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 40 V
Continuous Drain Current
- 10 A
Resistance Drain-source Rds (on)
112 mOhms
Mounting Style
Through Hole
Package / Case
TO-251
Power Dissipation
1 W
Ordering number : ENA1444A
SFT1341
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
7518-004
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
Marking
(TP, TP-FA)
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
0.85
0.7
0.6
1.8V drive
1
2.3
6.5
5.0
2
4
Parameter
2.3
3
T1341
LOT No.
unit : mm (typ)
Protection diode in
2.3
0.5
0.5
1.2
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
Symbol
SFT1341-E
http://semicon.sanyo.com/en/network
SANYO Semiconductors
Packing Type (TP-FA) : TL
PW≤10μs, duty cycle≤1%
Tc=25°C
SFT1341
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
Package Dimensions
7003-004
TL
0.85
0.6
Conditions
1
2.3
6.5
5.0
4
2
60612 TKIM/40809PA MSIM TC-00001932
2.3
3
DATA SHEET
unit : mm (typ)
Electrical Connection
0.5
2.3
1.2
0.5
0 t o 0.2
Ratings
--55 to +150
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
SFT1341-TL-E
1
--40
±10
--10
--40
150
1.0
15
No.A1444-1/9
Unit
°C
°C
W
W
A
A
V
V
2, 4
3

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SFT1341-E Summary of contents

Page 1

... SANYO Semiconductors P-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol Conditions V DSS V GSS PW≤10μs, duty cycle≤ Tc=25°C Tch Tstg Package Dimensions 7003-004 SFT1341-E 6.5 0.5 5.0 4 0. Gate 2 : Drain 3 : Source 4 : Drain 2.3 SANYO : TP • Package : TP-FA • JEITA, JEDEC : SC-63, TO-252 • ...

Page 2

... -- =4Ω D PW=10μs D.C.≤1% G SFT1341 P.G 50Ω S Ordering Information Device SFT1341-E SFT1341-TL-E SFT1341 Symbol Conditions V (BR)DSS I D =--1mA =0V I DSS V DS =--40V =0V I GSS V GS =±8V = (off =--10V =--1mA | yfs | V DS =--10V =-- (on =--5A =--4 ...

Page 3

... Drain Current Time -- 100 (on --0.1 --1.0 Drain Current SFT1341 -- --10V --9 --8 --7 --6 --5 --4 --3 --2 --1 0 --0.8 --0.9 --1.0 0 IT14522 300 Ta=25 ° C 280 260 240 220 200 180 160 140 120 ...

Page 4

... --10A --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0 Total Gate Charge 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature °C SFT1341 --40A --10A -- --1 Tc=25 ° C Single pulse --0 --0.1 IT14530 120 140 160 IT14532 PW≤10μs ...

Page 5

... Taping Specifi cation SFT1341-TL-E SFT1341 No.A1444-5/9 ...

Page 6

... Outline Drawing SFT1341-TL-E SFT1341 Land Pattern Example Mass (g) Unit 0.282 mm * For reference Unit: mm 7.0 1.5 2.3 2.3 No. A1444-6/9 ...

Page 7

... Bag Packing Specifi cation SFT1341-E SFT1341 No.A1444-7/9 ...

Page 8

... Outline Drawing SFT1341-E SFT1341 Mass (g) Unit 0.315 mm * For reference No. A1444-8/9 ...

Page 9

... Note on usage : Since the SFT1341 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

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