PMN35EN,115 NXP Semiconductors, PMN35EN,115 Datasheet - Page 2
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PMN35EN,115
Manufacturer Part Number
PMN35EN,115
Description
MOSFET 30 V, 5.1 A N-CH TRENCH MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.PMN35EN115.pdf
(15 pages)
Specifications of PMN35EN,115
Rohs
yes
Factory Pack Quantity
3000
NXP Semiconductors
3. Ordering information
Table 3.
4. Marking
Table 4.
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
PMN35EN
Product data sheet
Type number
PMN35EN
Type number
PMN35EN
Symbol
V
V
I
I
P
T
T
T
Source-drain diode
I
D
DM
S
j
amb
stg
DS
GS
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Ordering information
Marking codes
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
TSOP6
Package
Name
Description
plastic surface-mounted package (TSOP6); 6 leads
All information provided in this document is subject to legal disclaimers.
Conditions
T
V
V
T
T
T
T
j
amb
amb
sp
amb
GS
GS
Rev. 1 — 20 July 2011
= 25 °C
= 25 °C
= 10 V; T
= 10 V; T
= 25 °C; single pulse; t
= 25 °C
= 25 °C
Marking code
SH
amb
amb
= 25 °C
= 100 °C
p
30 V, 5.1 A N-channel Trench MOSFET
≤ 10 µs
[1]
[1]
[2]
[1]
[1]
Min
-
-20
-
-
-
-
-
-
-55
-55
-65
-
PMN35EN
© NXP B.V. 2011. All rights reserved.
2
SOT457
150
150
150
Version
Max
30
20
5.1
3.2
24
500
1250
4170
1.3
.
Unit
V
V
A
A
A
mW
mW
mW
°C
°C
°C
A
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