DMG9N65CT Diodes Inc., DMG9N65CT Datasheet - Page 4

• Manufacturer Part Number: DMG9N65CT
• Description: MOSFET N-Ch Enh Mode FET 650V 10V VGS 9.0A
• Manufacturer: Diodes Inc.

Specifications of DMG9N65CT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 9 A
• Resistance Drain-source Rds (on): 1.3 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 28 ns
• Gate Charge Qg: 39 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.15 W
• Rise Time: 29 ns
• Typical Turn-off Delay Time: 122 ns

DMG9N65CT
Document number: DS35619 Rev. 6 - 2
0.001
0.01
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
100
6
5
4
3
2
0.1
-50
10
1
1
DUT on 1 * MRP Board
T
T = 25°C
V
Single Pulse
J(max)
A
GS
-25
= 10V
T , JUNCTION TEMPERATURE ( C)
0.001
0.01
J
DC
P
V , DRAIN-SOURCE VOLTAGE (V)
= 150°C
W
0.1
R
Limited
DS
Fig. 9 SOA, Safe Operation Area
1
DS(on)
= 10s
0.001
0
P
W
D = Single Pulse
D = 0.9
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
P
= 1s
W
10
25
= 100ms
P
I = 250µA
W
D
= 10ms
50
P = 1ms
W
0.01
P
W
I = 1mA
D
= 100µs
75
100
100

0.1
125
Fig. 10 Transient Thermal Resistance
t1, PULSE DURATION TIME (sec)
150
1,000
1
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4 of 6
10
10
8
6
4
2
0
0
Fig. 8 Diode Forward Voltage vs. Current
0.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
100
R
R
Duty Cycle, D = t1/t2
JA(t)

JA
0.4
= 57 C/W
= r
(t)

* R
1,000

0.6
JA
T = 25°C
A
0.8
10,000
DMG9N65CT
1.0
© Diodes Incorporated
February 2013
1.2