DMG9N65CT Diodes Inc., DMG9N65CT Datasheet - Page 2

• Manufacturer Part Number: DMG9N65CT
• Description: MOSFET N-Ch Enh Mode FET 650V 10V VGS 9.0A
• Manufacturer: Diodes Inc.

Specifications of DMG9N65CT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 9 A
• Resistance Drain-source Rds (on): 1.3 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 28 ns
• Gate Charge Qg: 39 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.15 W
• Rise Time: 29 ns
• Typical Turn-off Delay Time: 122 ns

Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
Pulsed Drain Current (Note 6)
Avalanche Current (Note 7) V
Repetitive Avalanche Energy (Note 7) V
Power Dissipation (Note 5) T
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
DMG9N65CT
Document number: DS35619 Rev. 6 - 2
5. Device mounted on an infinite heatsink
6. Repetitive rating, pulse width limited by junction temperature.
7. I
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
AR
and E
GS
AR
Characteristic
rating are based on low frequency and duty cycles to keep T
= 10V
T
C
C
(@T
DD
Characteristic
Characteristic
= +25°C
= +70°C
= 100V, V
A
J
= +25°C, unless otherwise specified.)
= +25°C
GS
= 10V
DD
(@T
GS
= 100V, V
A
= 10V, L = 60mH
= +25°C, unless otherwise specified.)
Steady
State
GS
= 10V, L = 60mH
T
T
C
C
Symbol
R
BV
V
= +25°C
= +70°C
DS (ON)
t
t
I
I
|Y
C
V
C
C
Q
D(on)
D(off)
GS(th)
Q
GSS
Q
DSS
R
Q
t
t
t
SD
oss
DSS
iss
rss
rr
gs
gd
fs
r
f
g
rr
g
|
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2 of 6
Min
650
J
Symbol
T
Symbol
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3
= +25°C.
J
V
V
R
E
,
I
P
I
DSS
GSS
I
DM
AR
θJC
T
AR
D
D
STG
2310
11.9
4.17
Typ
122
122
570
0.7
8.5
0.7
2.2
2.2
8.5
39
39
29
28
—
—
—
—
±100
Max
1.0
1.3
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5
Value
-55 to +150
650
±30
260
9.0
7.0
2.7
30
Unit
µA
nA
nC
µC
pF
ns
ns
ns
ns
ns
Ω
Ω
V
V
S
V
Max
165
100
0.7
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
I
V
R
dI/dt = 100A/µs, V
I
D
F
GS
DS
GS
DS
GS
DS
GS
DS
DS
GS
GS
G
= 8A
= 8A
= 25Ω, I
= 650V, V
= V
= 40V, I
= 25V, V
= 0V, V
= 0V, I
= ±30V, V
= 10V, I
= 0V, I
= 10V, V
= 10V, V
GS
Test Condition
DMG9N65CT
, I
D
S
D
GS
D
D
D
= 250µA
= 1A
GS
DS
DS
= 8A
= 250μA
= 4.5A
= 4.5A
GS
DS
= 0V, f = 1MHz
= 0V,
= 520V,
= 325V,
© Diodes Incorporated
= 0V
= 0V
DS
February 2013
Unit
= 100V,
mJ
V
V
A
A
A
°C/W
Unit
°C
W