STF20N65M5 STMicroelectronics, STF20N65M5 Datasheet - Page 6

• Manufacturer Part Number: STF20N65M5
• Description: MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh(TM) V
• Manufacturer: STMicroelectronics

Specifications of STF20N65M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 650 V
• Continuous Drain Current: 18 A, 72 A
• Resistance Drain-source Rds (on): 0.19 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-220 FP
• Fall Time: 7.5 ns
• Gate Charge Qg: 36 nC
• Power Dissipation: 130 W
• Rise Time: 7.5 ns

Electrical characteristics
2.1
6/21
Figure 2.
Figure 4.
Figure 6.
0.1
0.1
(A)
(A)
10
10
I
I
D
D
1
1
0.1
0.1
(A)
20
10
40
35
30
25
15
I
D
0
5
0
Electrical characteristics (curves)
Safe operating area for D²PAK,
I²PAK, TO-220
Safe operating area for TO-247
Output characteristics
5
1
1
10
10
10
Tj=150°C
Tc=25°C
Tj=150°C
Tc=25°C
V GS = 9, 10 V
Single
pulse
Single
pulse
15
V GS = 7 V
100
100
20
V GS = 6 V
V GS = 8 V
25
V
V
DS
DS
V
(V)
(V)
DS
Doc ID 022865 Rev 2
100µs
100µs
AM15584v1
10µs
1ms
10ms
AM15586v1
10µs
1ms
10ms
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
AM15587v1
(V)
Figure 3.
Figure 5.
Figure 7.
(A)
35
20
15
10
30
25
I
40
D
0
5
3
I²PAK, TO-220
Thermal impedance for TO-247
Transfer characteristics
Thermal impedance for D²PAK,
4
V DS = 25 V
5
6
7
8
9
V
GS
(V)
AM15588v1