SIHG14N50D-E3 Vishay/Siliconix, SIHG14N50D-E3 Datasheet - Page 5

• Manufacturer Part Number: SIHG14N50D-E3
• Description: MOSFET 500V 400mOhm@10V 14A N-Ch D-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHG14N50D-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Continuous Drain Current: 14 A
• Resistance Drain-source Rds (on): 400 mOhms at 10 V
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-247AC
• Power Dissipation: 208 W

S12-1229-Rev. A, 21-May-12
Vary t
required I
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
p
Fig. 14 - Unclamped Inductive Test Circuit
to obtain
90 %
10 %
AS
Fig. 12 - Switching Time Test Circuit
V
Fig. 13 - Switching Time Waveforms
V
DS
GS
R
R
Pulse width ≤ 1 μs
Duty factor ≤ 0.1 %
10 V
www.vishay.com
G
G
10 V
V
GS
t
V
d(on)
DS
V
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
DS
t
p
t
r
I
AS
D.U.T.
D.U.T.
0.01 Ω
L
R
D
t
d(off)
For technical questions, contact:
t
f
+
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DD
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DD
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[e-mail]
Fig. 15 - Unclamped Inductive Waveforms
V
10 V
I
www.vishay.com/doc?91000
Fig. 16 - Basic Gate Charge Waveform
AS
12 V
DS
V
V
G
Fig. 17 - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
Q
0.2 μF
GS
Current sampling resistors
3 mA
50 kΩ
Charge
Q
0.3 μF
Q
t
p
GD
G
I
G
SiHG14N50D
Vishay Siliconix
Document Number: 91513
D.U.T.
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DS
D
+
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V
DD
DS