PSMN050-80BS,118 NXP Semiconductors, PSMN050-80BS,118 Datasheet - Page 5

• Manufacturer Part Number: PSMN050-80BS,118
• Description: MOSFET N-CH 80 V 46 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN050-80BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 73 V
• Gate-source Breakdown Voltage: 5.2 V
• Continuous Drain Current: 22 A
• Resistance Drain-source Rds (on): 46 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 56 W
• Factory Pack Quantity: 800

NXP Semiconductors
6. Characteristics
Table 6.
Tested to JEDEC standards where applicable.
PSMN050-80BS
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
internal gate resistance
(AC)
total gate charge
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
f = 1 MHz
I
I
see
I
see
I
see
V
V
T
V
R
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
D
D
D
j
DS
DS
GS
GS
GS
GS
DS
DS
DS
G(ext)
= 25 °C; see
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 0 A; V
= 25 A; V
= 25 A; V
= 25 A; V
Figure
Figure
Figure
Figure 13
Figure
Figure 14
Figure
= 80 V; V
= 80 V; V
= 40 V
= 12 V; V
= 12 V; R
= -20 V; V
= 20 V; V
= 10 V; I
= 10 V; I
= 4.7 Ω
Rev. 1 — 2 March 2012
DS
11; see
11; see
11; see
14; see
14; see
DS
DS
DS
DS
DS
DS
D
D
= 0 V; V
GS
GS
GS
DS
L
GS
GS
DS
= 10 A; T
= 10 A; T
= 40 V; V
= 40 V; V
= 40 V; V
N-channel 80 V 46 mΩ standard level MOSFET in D2PAK
= V
= V
= V
Figure 17
= 0.5 Ω; V
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 12
Figure 12
Figure 12
Figure 15
Figure 15
; T
; T
; T
GS
j
j
j
j
j
GS
GS
GS
= 10 V
j
j
j
= 175 °C;
= -55 °C;
= 25 °C;
= 100 °C;
= 25 °C
j
j
j
GS
= 25 °C
= 125 °C
= 25 °C
= -55 °C
= 25 °C
= 25 °C
= 10 V;
= 10 V;
= 10 V;
= 10 V;
PSMN050-80BS
Min
73
80
1
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
3
-
-
-
-
-
37
2
9
11
3.8
1.9
1.9
2.3
5.2
633
100
50
9.2
1
16
2.4
© NXP B.V. 2012. All rights reserved.
Max
-
-
-
4.6
4
1
15
100
100
74
46
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
µA
pF
ns
ns
Unit
V
V
V
µA
nA
nA
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
V
pF
pF
ns
ns
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