PSMN013-100XS,127 NXP Semiconductors, PSMN013-100XS,127 Datasheet - Page 12
PSMN013-100XS,127
Manufacturer Part Number
PSMN013-100XS,127
Description
MOSFET N-ch 100V 13mA MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN013-100XS127.pdf
(15 pages)
Specifications of PSMN013-100XS,127
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
24.9 A
Resistance Drain-source Rds (on)
10.8 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220F
Minimum Operating Temperature
- 55 C
Power Dissipation
48.4 W
Factory Pack Quantity
50
NXP Semiconductors
9. Revision history
Table 8.
PSMN013-100XS
Product data sheet
Document ID
PSMN013-100XS v.2
Modifications:
PSMN013-100XS v.1
Revision history
20120306
20111213
Release date
•
•
Status changed from preliminary to product.
Various changes to content.
N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A)
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Preliminary data sheet
Rev. 2 — 6 March 2012
Change notice
-
-
PSMN013-100XS
Supersedes
PSMN013-100XS v.1
-
© NXP B.V. 2012. All rights reserved.
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