PSMN013-100XS,127 NXP Semiconductors, PSMN013-100XS,127 Datasheet - Page 10

• Manufacturer Part Number: PSMN013-100XS,127
• Description: MOSFET N-ch 100V 13mA MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-100XS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 24.9 A
• Resistance Drain-source Rds (on): 10.8 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220F
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 48.4 W
• Factory Pack Quantity: 50

NXP Semiconductors
PSMN013-100XS
Product data sheet
Fig 18. Source current as a function of source-drain voltage; typical values
(A)
I
S
120
100
80
60
40
20
0
0
N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A)
All information provided in this document is subject to legal disclaimers.
0.3
Rev. 2 — 6 March 2012
T
j
= 175 ° C
0.6
0.9
T
j
003aag614
= 25 ° C
V
SD
(V)
1.2
PSMN013-100XS
© NXP B.V. 2012. All rights reserved.
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