DMP21D5UFD-7 Diodes Inc., DMP21D5UFD-7 Datasheet - Page 4

• Manufacturer Part Number: DMP21D5UFD-7
• Description: MOSFET P-Ch Enh Mode FET 1.0Ohm -20V -600mA
• Manufacturer: Diodes Inc.

Specifications of DMP21D5UFD-7

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 600 mA
• Resistance Drain-source Rds (on): 3 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: X1-DFN1212-3
• Fall Time: 19.2 ns
• Gate Charge Qg: 0.5 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.4 W
• Rise Time: 4.3 ns
• Typical Turn-off Delay Time: 20.2 ns

DMP21D5UFD
Document number: DS35931 Rev. 4 - 2
0.001
1.4
1.2
1.0
0.8
0.6
0.4
0.2
100
0.01
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
10
0.1
0
-50
1
0
1
0.1
R
Limited
DS(ON)
T
T = 25 C
Single Pulse
f = 1MHz
-25
J(MAX)
A
T , JUNCTION TEMPERATURE ( C)
-V , DRAIN-SOURCE VOLTAGE (V)
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
J
DS
°
Fig. 11 SOA, Safe Operation Area
DS
= 150 C
0
5
P
°
DC
W
= 10s
P
W
25
P
1
W
= 1s
= 100ms
P
W
= 10ms
50
10
I = -250µA
D
P
W
= 1ms
75
I = -1mA
D
10
100
C
C
C
15
rss
iss
oss
°
P
125 150
W
= 100µs
20
100
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1,000
100
10
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
1.0
0.8
0.6
0.4
0.2
1
8
7
6
5
4
3
2
1
0
0
0.4
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig. 8 Diode Forward Voltage vs. Current
-V , DRAIN-SOURCE VOLTAGE(V)
Fig. 12 Gate-Charge Characteristics
-V , SOURCE-DRAIN VOLTAGE (V)
4
DS
Q , TOTAL GATE CHARGE (nC)
SD
g
0.6
8
T = 25 C
0.8
A
12
°
T = 1
T = 2
T = 1
T = 8
A
A
A
A
DMP21D5UFD
50 C
5 C
25 C
5 C
°
°
°
°
1.0
16
© Diodes Incorporated
August 2012
20
1.2