DMP21D5UFD-7 Diodes Inc., DMP21D5UFD-7 Datasheet - Page 2

• Manufacturer Part Number: DMP21D5UFD-7
• Description: MOSFET P-Ch Enh Mode FET 1.0Ohm -20V -600mA
• Manufacturer: Diodes Inc.

Specifications of DMP21D5UFD-7

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 600 mA
• Resistance Drain-source Rds (on): 3 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: X1-DFN1212-3
• Fall Time: 19.2 ns
• Gate Charge Qg: 0.5 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.4 W
• Rise Time: 4.3 ns
• Typical Turn-off Delay Time: 20.2 ns

Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
Continuous Drain Current (Note 6) V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode continuous Current
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge V
Total Gate Charge V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMP21D5UFD
Document number: DS35931 Rev. 4 - 2
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
GS
GS
Characteristic
= -4.5V
= -8V
(@T
A
J
Characteristic
= +25°C, unless otherwise specified.)
= +25°C
GS
GS
Characteristic
= -4.5V
= -1.8V
(@T
A
= +25°C, unless otherwise specified.)
Steady
Steady
State
State
Symbol
R
BV
V
DS (ON)
t
t
I
I
|Y
C
V
C
C
Q
D(off)
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GS(th)
Q
D(on)
GSS
DSS
Q
Q
t
SD
oss
t
DSS
rss
iss
gd
fs
gs
r
f
g
g
|
2 of 6
T
T
T
T
A
A
A
A
= +25°C
= +70°C
= +25°C
= +70°C
Min
-0.5
-20
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Steady state
Steady state
-0.75
46.1
20.2
19.2
Typ
0.7
0.9
1.2
1.5
0.7
7.2
4.9
0.5
0.8
0.1
0.1
8.5
4.3
—
—
—
—
5
Symbol
V
V
I
GSS
DSS
I
I
DM
I
±10.0
D
D
S
-100
Max
-1.0
-1.2
-80
1.0
1.5
2.0
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Symbol
T
J,
R
R
P
P
T
θ JA
θ JA
D
D
STG
Unit
nC
nA
µA
pF
Ω
ns
V
V
S
V
Value
-55 to +150
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
R
I
-600
-500
-400
-300
-800
V
V
D
-20
±8
-2
GS
DS
DS
GS
DS
GS
GS
GS
GS
GS
DS
GS
DS
DD
L
DS
Value
= -100mA
= 300Ω, R
280
140
0.4
0.8
= -4.5V, V
= -20V, V
= V
= -3V, I
= -10V, V
= 0V, I
= ±8V, V
= -4.5V, I
= -2.5V, I
= -1.8V, I
= -1.5V, I
= -1.2V, I
= 0V, I
= -3V, V
= -10V, I
DMP21D5UFD
GS
Test Condition
, I
D
S
D
D
GS
= -1mA
= -330mA,
DS
G
= -100mA
D
GS
D
D
D
D
D
GS
= -250μA
GS
= 25Ω,
= -100mA
= -80mA
= -40mA
= -30mA
= -1mA
= -250mA
= -2.5V,
© Diodes Incorporated
= 0V
= 0V
= 0V,
= 0V
Units
August 2012
mA
mA
mA
Units
°C/W
°C/W
V
V
A
°C
W
W