PZU6.8B3 T/R NXP Semiconductors, PZU6.8B3 T/R Datasheet - Page 4
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PZU6.8B3 T/R
Manufacturer Part Number
PZU6.8B3 T/R
Description
Zener Diodes ZENER DIODE
Manufacturer
NXP Semiconductors
Datasheet
1.PZU5.6B_TR.pdf
(12 pages)
Specifications of PZU6.8B3 T/R
Product Category
Zener Diodes
Rohs
yes
Zener Voltage
7 V
Voltage Tolerance
2 %
Voltage Temperature Coefficient
3.4 mV/k
Power Dissipation
550 mW
Maximum Reverse Leakage Current
500 uA
Maximum Zener Impedance
20 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-90
Configuration
Single
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
PZU6.8B3,115
NXP Semiconductors
Table 8.
T
[1]
[2]
PZUXB_SER_2
Product data sheet
PZU
xxx
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
j
= 25
f = 1 MHz; V
t
p
= 100 μs; square wave; T
°
Sel Working
B
B
B1 2.5
B2 2.65
B
B1 2.80
B2 2.95
B
B1 3.10
B2 3.25
B
B1 3.40
B2 3.55
B
B1 3.70
B2 3.87
B
B1 4.01
B2 4.15
B3 4.28
B
B1 4.42
B2 4.55
B3 4.69
B
B1 4.84
B2 4.98
B3 5.14
B
B1 5.31
B2 5.49
B3 5.67
C unless otherwise specified
Characteristics per type; PZU2.4B to PZU5.6B3
voltage
V
I
Min
2.3
2.5
2.80
3.10
3.40
3.70
4.01
4.42
4.84
5.31
Z
Z
= 5 mA
R
(V);
= 0 V
Max
2.6
2.9
2.75
2.9
3.20
3.05
3.20
3.50
3.35
3.50
3.80
3.65
3.80
4.10
3.97
4.10
4.48
4.21
4.34
4.48
4.90
4.61
4.75
4.90
5.37
5.04
5.20
5.37
5.92
5.55
5.73
5.92
j
Maximum differential
resistance
r
I
1000
1000
1000
1000
1000
1000
1000
800
250
100
Z
= 25 °C prior to surge
dif
= 0.5 mA I
(Ω)
100
100
95
95
90
90
90
80
60
40
Z
= 5 mA
Rev. 02 — 15 November 2009
50
20
10
5
5
3
3
2
Reverse
current
I
Max
2
1
R
(μA)
V
1
1
1
1
1
1
1
1
1.5
2.5
R
(V) Typ
Temperature
coefficient
S
I
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
0.3
1.9
Z
Single Zener diodes in a SOD323F package
Z
= 5 mA
(mV/K);
450
440
425
410
390
370
350
325
300
275
Diode
capacitance
C
Max
d
(pF)
PZUxB series
[1]
Non-repetitive peak
reverse current
I
Max
8
8
8
8
8
8
8
8
5.5
5.5
ZSM
© NXP B.V. 2009. All rights reserved.
(A)
[2]
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