BUZ32 H Infineon Technologies, BUZ32 H Datasheet - Page 7

• Manufacturer Part Number: BUZ32 H
• Description: MOSFET N-Channel 200V Transistor
• Manufacturer: Infineon Technologies

Specifications of BUZ32 H

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.5 A
• Resistance Drain-source Rds (on): 0.4 Ohms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Fall Time: 30 nS
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 75 W
• Rise Time: 40 nS
• Typical Turn-off Delay Time: 55 nS
• Part # Aliases: BUZ32HXK BUZ32HXKSA1 SP000682998

Drain-source on-resistance
R
parameter: I
R
Typ. capacitances
C = f ( V
parameter: V
Rev. 2.4
C
DS (on)
DS (on)
10
10
10
10
nF
1.3
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Ω
-1
-2
DS
-60
1
0
0
= ƒ ( T
)
GS
D
5
j
)
= 6 A, V
-20
= 0V, f = 1MHz
10
20
15
GS
= 10 V
98%
typ
20
60
25
100
30
T
˚C
V
V
j
DS
C
C
C
iss
oss
rss
160
40
Page 7
Forward characteristics of reverse diode
I
parameter: T
Gate threshold voltage
V
parameter: V
V
F
I
GS(th)
F
GS (th)
= ƒ ( V
10
10
10
10
4.6
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
A
-1
2
1
0
0.0
V
SD
-60
= ƒ ( T
)
0.4
j
, t
j
GS
)
-20
p
= V
= 80 µs
0.8
DS
20
1.2
T
T
T
, I
T
j
j
j
j
= 25 ˚C typ
= 150 ˚C typ
= 25 ˚C (98%)
= 150 ˚C (98%)
D
98%
typ
2%
= 1 mA
1.6
60
2.0
100
2.4
2009-11-10
BUZ 32 H
V
T
SD
˚C
V
j
3.0
160