BSS126 H6906 Infineon Technologies, BSS126 H6906 Datasheet - Page 5

• Manufacturer Part Number: BSS126 H6906
• Description: MOSFET N-KANAL SMALL SIGNAL MOS
• Manufacturer: Infineon Technologies

Specifications of BSS126 H6906

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.021 A
• Resistance Drain-source Rds (on): 700 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT23-3
• Fall Time: 115 ns
• Forward Transconductance Gfs (max / Min): 0.017 S
• Gate Charge Qg: 1.4 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.5 W
• Rise Time: 9.7 ns
• Typical Turn-off Delay Time: 14 ns
• Part # Aliases: BSS126H6906XT BSS126H6906XTSA1 SP000705716

Rev. 2.1
Rev. 2.1
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
D
D
=f(V
=f(V
0.025
0.015
0.005
0.02
0.01
0.04
0.04
0.03
0.03
0.02
0.02
0.01
0.01
DS
GS
0
0
0
); T
); V
-2
0
0
j
DS
=25 °C
GS
=3 V; T
4
4
j
-1
=25 °C
V
V
V
GS
DS
DS
8
8
[V]
[V]
[V]
0
12
12
-0.2 V
-0.2 V
0.1 V
0.1 V
-0.1 V
-0.1 V
0 V
0 V
0.2 V
0.2 V
10 V
10 V
0.5 V
0.5 V
1 V
1 V
16
16
1
page 5
page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
0.025
0.015
0.005
1000
1000
0.02
0.01
900
900
800
800
700
700
600
600
500
500
400
400
300
300
200
200
100
100
D
=f(I
0
0
0
0.000
); T
0
0
D
j
); T
=25 °C
GS
j
=25 °C
0.005
0.01
0.01
-0.2 V
-0.2 V
-0.1 V
-0.1 V
0.010
I
I
I
D
D
D
0.02
0.02
[A]
[A]
[A]
0 V 0.1 V0.2 V
0 V 0.1 V0.2 V
0.015
0.03
0.03
2012-03-14
2012-03-14
BSS126
0.5 V
0.5 V
10 V
10 V
1 V
1 V
0.020
0.04
0.04