IPA032N06N3 G Infineon Technologies, IPA032N06N3 G Datasheet

IPA032N06N3 G

Manufacturer Part Number

IPA032N06N3 G

Description

MOSFET N-KANAL POWER MOS

Manufacturer

Infineon Technologies

Datasheet

1.IPA032N06N3_G.pdf (9 pages)

Specifications of IPA032N06N3 G

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

84 A

Resistance Drain-source Rds (on)

3.2 mOhms

Configuration

Single

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Package / Case

PG-TO220-3 FullPAK

Fall Time

20 ns

Forward Transconductance Gfs (max / Min)

135 S

Gate Charge Qg

124 nC

Minimum Operating Temperature

- 55 C

Power Dissipation

41 W

Rise Time

120 ns

Factory Pack Quantity

500

Typical Turn-off Delay Time

62 ns

Part # Aliases

IPA032N06N3GXK IPA032N06N3GXKSA1 SP000453608

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