PSMN4R3-100PS,127 NXP Semiconductors, PSMN4R3-100PS,127 Datasheet - Page 14
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
PSMN4R3-100PS,127
Manufacturer Part Number
PSMN4R3-100PS,127
Description
MOSFET N-Ch 100V 4.3 m? std level MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN4R3-100PS127.pdf
(15 pages)
Specifications of PSMN4R3-100PS,127
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
120 A
Resistance Drain-source Rds (on)
4.3 mOhms
Configuration
Single
Mounting Style
Through Hole
Package / Case
TO-220AB
Fall Time
63 ns
Gate Charge Qg
170 nC
Power Dissipation
338 W
Rise Time
91 ns
Factory Pack Quantity
50
NXP Semiconductors
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
10. Contact information
For more information, please visit:
For sales office addresses, please send an email to:
PSMN4R3-100PS
Product data sheet
http://www.nxp.com
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 27 October 2011
N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220
salesaddresses@nxp.com
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
9.4
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
Trademarks
PSMN4R3-100PS
© NXP B.V. 2011. All rights reserved.
14 of 15