PSMN4R3-100PS,127 NXP Semiconductors, PSMN4R3-100PS,127 Datasheet - Page 10

• Manufacturer Part Number: PSMN4R3-100PS,127
• Description: MOSFET N-Ch 100V 4.3 m? std level MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R3-100PS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 4.3 mOhms
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 63 ns
• Gate Charge Qg: 170 nC
• Power Dissipation: 338 W
• Rise Time: 91 ns
• Factory Pack Quantity: 50

NXP Semiconductors
PSMN4R3-100PS
Product data sheet
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
(A)
I
100
S
80
60
40
20
0
0
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 27 October 2011
T
0.3
j
= 175 ° C
N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220
0.6
T
j
= 25 ° C
0.9
003aaf731
V
SD
(V)
1.2
PSMN4R3-100PS
© NXP B.V. 2011. All rights reserved.
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