SIZ918DT-T1-GE3 Vishay/Siliconix, SIZ918DT-T1-GE3 Datasheet - Page 13

• Manufacturer Part Number: SIZ918DT-T1-GE3
• Description: MOSFET 30V 16A/28A 29/100W 12mohm / 3.7mohm@10V
• Manufacturer: Vishay/Siliconix

Specifications of SIZ918DT-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 28 A
• Resistance Drain-source Rds (on): 0.012 Ohms
• Configuration: Dual
• Mounting Style: SMD/SMT
• Package / Case: PowerPAIR 6 x 5
• Power Dissipation: 100 W
• Part # Aliases: SIZ918DT-GE3

RECOMMENDED MINIMUM PAD FOR PowerPAIR
Document Number: 67480
Revision: 13-Jan-11
Pin 1
(0.022)
(0.085)
0.567
2.153
(0.128)
3.260
®
Recommended Minimum Pad
Dimensions in mm (inches)
6 x 5
(0,0)
(0.279)
7.080
(0.050)
(0.154)
1.270
3.920
(0.022)
0.560
(0.038)
0.970
(0.028)
0.700
(0.024)
(0.016)
(0.016)
0.616
0.407
0.407
Vishay Siliconix
PAD Pattern
www.vishay.com
1