SIHF6N40D-E3 Vishay/Siliconix, SIHF6N40D-E3 Datasheet - Page 3

• Manufacturer Part Number: SIHF6N40D-E3
• Description: MOSFET 400V 1ohm@10V 6A N-Ch D-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHF6N40D-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: 5 V
• Continuous Drain Current: 6 A
• Resistance Drain-source Rds (on): 1 Ohms at 10 V
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-220FP-3
• Power Dissipation: 30 W

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
S12-0687-Rev. A, 02-Apr-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
16
12
15
12
10
9
6
3
0
8
6
4
2
0
8
4
0
Fig. 3 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
0
0
0
BOTTOM 5 V
TOP
BOTTOM
T
TOP
J
= 150 °C
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V
15 V
14 V
13 V
12 V
11 V
11 V
10 V
V
5
5
15 V
14 V
13 V
12 V
11 V
10 V
V
9 V
8 V
7 V
6 V
DS
9 V
8 V
7 V
6 V
GS
DS
5
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T
, Drain-to-Source Voltage (V)
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
J
T
= 25 °C
J
10
10
= 25 °C
T
10
J
= 150 °C
15
15
15
20
20
5 V
20
25
25
30
30
25
3
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 4 - Normalized On-Resistance vs. Temperature
1000
100
2.5
1.5
0.5
10
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24
20
16
12
3
2
1
0
1
- 60 - 40 - 20 0
8
4
0
0
0
C
C
rss
I
D
iss
C
50
= 3 A
V
oss
DS
T
J
Q
, Junction Temperature (°C)
, Drain-to-Source Voltage (V)
100
4
g
, Total Gate Charge (nC)
20 40 60 80 100 120 140 160
150
V
C
C
C
GS
iss
rss
oss
200
= 0 V, f = 1 MHz
8
= C
= C
= C
Vishay Siliconix
V
V
V
Document Number: 91501
gs
gd
DS
DS
DS
ds
250
SiHF6N40D
V
+ C
+ C
= 320 V
= 200 V
= 80 V
GS
gd
= 10 V
gd
300
, C
12
ds
Shorted
350
400
16