IPI110N20N3 G Infineon Technologies, IPI110N20N3 G Datasheet - Page 5

• Manufacturer Part Number: IPI110N20N3 G
• Description: MOSFET N-Channel 200V MOSFET
• Manufacturer: Infineon Technologies

Specifications of IPI110N20N3 G

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 88 A
• Resistance Drain-source Rds (on): 10.7 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-262-3
• Fall Time: 11 nS
• Gate Charge Qg: 65 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 26 nS
• Typical Turn-off Delay Time: 41 nS
• Part # Aliases: IPI110N20N3GAKSA1 IPI110N20N3GXK SP000714304

Rev. 2.3
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
200
175
150
125
100
200
180
160
140
120
100
75
50
25
80
60
40
20
DS
GS
0
0
); T
); |V
0
0
j
=25 °C
DS
GS
j
|>2|I
1
2
D
|R
175 °C
DS(on)max
10 V
7 V
2
V
V
DS
GS
4
[V]
[V]
25 °C
3
4.5 V
5 V
6
4
5
8
page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
180
160
140
120
100
20
15
10
80
60
40
20
D
=f(I
5
0
0
); T
0
0
D
j
); T
=25 °C
IPB107N20N3 G
GS
20
j
25
=25 °C
40
4.5 V
50
60
I
I
D
D
75
[A]
[A]
5 V
80
IPP110N20N3 G
IPI110N20N3 G
100
7 V
100
125
10 V
120
2011-07-14
140
150