PSMN4R3-100ES,127 NXP Semiconductors, PSMN4R3-100ES,127 Datasheet - Page 5

• Manufacturer Part Number: PSMN4R3-100ES,127
• Description: MOSFET N-Ch 100V 4.3 m std level MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R3-100ES,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 4.3 mOhms
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: I2PAK
• Fall Time: 63 ns
• Gate Charge Qg: 170 nC
• Power Dissipation: 338 W
• Rise Time: 91 ns
• Factory Pack Quantity: 50

NXP Semiconductors
6. Characteristics
Table 6.
PSMN4R3-100ES
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain leakage current
gate leakage current
drain-source on-state
resistance
gate resistance
total gate charge
gate-source charge
pre-threshold gate-source
charge
post-threshold gate-source
charge
gate-drain charge
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
All information provided in this document is subject to legal disclaimers.
see
see
see
V
V
V
I
V
see
V
T
V
R
Conditions
I
I
I
I
V
V
see
V
see
V
see
f = 1 MHz
see
I
I
see
D
D
D
D
D
D
D
D
j
DS
DS
GS
GS
GS
GS
GS
DS
DS
DS
G(ext)
Rev. 1 — 31 October 2011
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 75 A; V
= 0 A; V
= 75 A; V
= 25 °C; see
Figure 10
Figure 10
Figure
Figure
Figure
Figure 13
Figure
Figure
Figure 15
= 100 V; V
= 100 V; V
= 50 V; see
= 50 V; V
= 50 V; R
= -20 V; V
= 20 V; V
= 10 V; I
= 10 V; I
= 10 V; I
= 4.7 Ω; I
N-channel 100 V 4.3 mΩ standard level MOSFET in I2PAK
DS
11; see
12; see
12; see
14; see
14; see
DS
DS
DS
DS
DS
D
D
D
= 0 V; V
DS
GS
L
GS
GS
DS
= 25 A; T
= 25 A; T
= 25 A; T
= 50 V; V
= 50 V; V
GS
GS
= V
= V
= V
= 0.67 Ω; V
Figure 16
D
Figure
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 75 A; T
GS
GS
GS
Figure 10
Figure 13
Figure 13
Figure 15
Figure 15
; T
; T
; T
GS
14;
j
j
j
j
j
j
GS
GS
j
= 10 V
= -55 °C;
= 175 °C;
= 25 °C;
= 175 °C;
= 100 °C;
= 25 °C;
j
j
j
= 25 °C
j
j
= 25 °C
= -55 °C
= 25 °C
GS
= 25 °C
= 175 °C
= 10 V;
= 10 V;
j
= 25 °C
= 10 V;
PSMN4R3-100ES
[1]
Min
100
90
-
1
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
3
0.08
-
10
10
10.4
6.6
3.7
0.9
170
140
48
31
17.3
49
5.1
9900
660
381
45
91
122
63
© NXP B.V. 2011. All rights reserved.
10
-
Max
-
-
4.6
-
4
500
100
100
12
7.8
4.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
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