PSMN4R3-100ES,127 NXP Semiconductors, PSMN4R3-100ES,127 Datasheet - Page 2

• Manufacturer Part Number: PSMN4R3-100ES,127
• Description: MOSFET N-Ch 100V 4.3 m std level MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R3-100ES,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Resistance Drain-source Rds (on): 4.3 mOhms
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: I2PAK
• Fall Time: 63 ns
• Gate Charge Qg: 170 nC
• Power Dissipation: 338 W
• Rise Time: 91 ns
• Factory Pack Quantity: 50

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
PSMN4R3-100ES
Product data sheet
Pin
1
2
3
mb
Type number
PSMN4R3-100ES
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
Continuous current limited by package
Symbol Description
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
gate
drain
source
mounting base; connected to drain
I2PAK
Package
Name
Description
plastic single-ended package (I2PAK); TO-262
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 31 October 2011
Conditions
T
T
V
V
pulsed; t
see
T
T
pulsed; t
V
V
j
j
mb
mb
GS
GS
GS
sup
≥ 25 °C; T
≥ 25 °C; T
N-channel 100 V 4.3 mΩ standard level MOSFET in I2PAK
Figure 3
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 100 V; R
Simplified outline
p
p
≤ 10 µs; T
≤ 10 µs; T
j
j
SOT226 (I2PAK)
≤ 175 °C
≤ 175 °C; R
j
mb
j(init)
= 100 °C; see
GS
= 25 °C; see
Figure 2
= 25 °C; I
= 50 Ω; Unclamped
1
mb
mb
mb
2
= 25 °C;
= 25 °C
3
GS
D
= 20 kΩ
Figure 1
= 120 A;
Figure 1
PSMN4R3-100ES
Graphic symbol
[1]
[1]
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
mbb076
G
© NXP B.V. 2011. All rights reserved.
SOT226
175
175
Version
Max
100
100
20
119
120
673
338
260
120
673
537
D
S
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
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