PSMN2R7-30BL,118 NXP Semiconductors, PSMN2R7-30BL,118 Datasheet - Page 5

• Manufacturer Part Number: PSMN2R7-30BL,118
• Description: MOSFET Std N-chanMOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R7-30BL,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 3 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 170 W
• Factory Pack Quantity: 800

NXP Semiconductors
6. Thermal characteristics
Table 6.
PSMN2R7-30BL
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
10
10
10
10
th(j-mb)
-1
-2
-3
-4
1
10
values
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
-6
δ = 0.5
0.1
0.05
0.02
0.2
Thermal characteristics
single shot
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Conditions
see
minimum footprint; mounted on
a printed-circuit board
Rev. 1 — 21 March 2012
Figure 4
10
N-channel 30 V 3.0 mΩ logic level MOSFET in D2PAK
-3
10
-2
PSMN2R7-30BL
Min
-
-
10
P
-1
t
p
Typ
0.54
50
T
t
p
© NXP B.V. 2012. All rights reserved.
(s)
003aad355
δ =
Max
0.88
-
T
t
p
t
1
K/W
Unit
K/W
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