SIHB30N60E-GE3 Vishay/Siliconix, SIHB30N60E-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIHB30N60E-GE3
• Description: MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHB30N60E-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 29 A
• Resistance Drain-source Rds (on): 125 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK (TO-263)
• Fall Time: 36 ns
• Forward Transconductance Gfs (max / Min): 5.4 S
• Gate Charge Qg: 85 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 250 W
• Rise Time: 32 ns
• Typical Turn-off Delay Time: 63 ns

S12-3103-Rev. E, 24-Dec-12
1000
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
100
0.1
0.001
10
1000
0.01
100
1
0.1
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
0.1
0.01
1
0.1
* V
0.0
0.0001
1
Fig. 8 - Maximum Safe Operating Area
T
T
Single Pulse
GS
C
J
= 150 °C
= 25 °C
> minimum V
www.vishay.com
0.2
Operation in this area
limited by R
V
0.2
0.1
Single Pulse
Duty Cycle = 0.5
0.05
0.02
DS
T
1
, Drain-to-Source Voltage (V)
J
V
0.4
= 150 °C
SD
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
- Source-to-Drain Voltage (V)
GS
0.6
DS(on)
at which R
10
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
0.8
BVDSS Limited
T
J
0.001
I
1.0
DS(on)
DM
= 25 °C
100
For technical questions, contact:
Limited
is specified
1.2
1.4
1000
1 ms
10 ms
100 μs
Square Wave Pulse Duration (s)
1.6
4
0.01
[e-mail]
30.0
25.0
20.0
15.0
10.0
5.0
0
Fig. 9 - Maximum Drain Current vs. Case Temperature
25
Fig. 10 - Temperature vs. Drain-to-Source Voltage
www.vishay.com/doc?91000
50
0.1
T
T
C
J
- Temperature (°C)
- Temperature (°C)
75
100
Vishay Siliconix
SiHB30N60E
Document Number: 91453
125
1
150