SIHB24N65E-GE3 Vishay/Siliconix, SIHB24N65E-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIHB24N65E-GE3
• Description: MOSFET 650V 145mOhm@10V 24A N-Ch E-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHB24N65E-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 24 A
• Resistance Drain-source Rds (on): 145 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK (TO-263)
• Fall Time: 69 ns
• Forward Transconductance Gfs (max / Min): 7.1 S
• Gate Charge Qg: 81 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 250 W
• Rise Time: 84 ns
• Typical Turn-off Delay Time: 70 ns

S12-1716-Rev. E, 16-Jul-12
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
100
0.1
100
10
0.1
10
1
1
1
0.2
* V
Limited by R
Fig. 8 - Maximum Safe Operating Area
T
T
Single Pulse
GS
C
J
0.01
0.1
= 150 °C
= 25 °C
T
> minimum V
1
0.4
J
0.0001
www.vishay.com
Operation in this area
limited by R
V
= 150 °C
V
DS
SD
10
0.02
, Drain-to-Source Voltage (V)
0.2
, Source-Drain Voltage (V)
0.6
DS(on)
0.05
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
BVDSS Limited
Duty Cycle = 0.5
0.1
*
GS
DS(on)
0.8
at which R
100
Single Pulse
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
T
J
1.0
= 25 °C
DS(on)
1000
1.2
100 μs
10 ms
1 ms
0.001
V
is specified
GS
For technical questions, contact:
= 0 V
1.4
10 000
1.6
Pulse Time (s)
0.01
4
[e-mail]
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10 - Temperature vs. Drain-to-Source Voltage
825
800
775
750
725
700
675
650
25
20
15
10
5
0
- 60
25
www.vishay.com/doc?91000
- 40 - 20
T
50
0.1
J
T
, Junction Temperature (°C)
J
0
, Case Temperature (°C)
20 40 60 80 100 120 140
75
100
Vishay Siliconix
SiHB24N65E
Document Number: 91477
125
1
160
150