IKA15N65F5 Infineon Technologies, IKA15N65F5 Datasheet - Page 11

• Manufacturer Part Number: IKA15N65F5
• Description: IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
• Manufacturer: Infineon Technologies

Specifications of IKA15N65F5

• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 14 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 16.7 W
• Package / Case: PG-TO-220-3
• Mounting Style: Through Hole
• Part # Aliases: IKA15N65F5XKSA1

Figure 13. Typicalswitchingenergylossesasa
0.300
0.275
0.250
0.225
0.200
0.175
0.150
0.125
0.100
0.075
0.050
0.025
0.000
Figure 15. Typicalswitchingenergylossesasa
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
200
5
V
CE
functionofgateresistor
(inductiveload,T
V
Figure E)
functionofcollectoremittervoltage
(inductiveload,T
I
Figure E)
15
C
,COLLECTOR-EMITTERVOLTAGE[V]
GE
=7,5A,r
E
E
E
E
E
E
250
off
on
ts
off
on
ts
=15/0V,I
25
r
G
,GATERESISTOR[ ]
G
300
=39 ,Dynamictestcircuitin
35
C
=7,5A,Dynamictestcircuitin
vj
vj
350
=150°C,V
=150°C,V
45
55
400
CE
GE
65
=400V,
=15/0V,
Highspeedswitchingseriesfifthgeneration
450
75
500
85
11
Figure 14. Typicalswitchingenergylossesasa
Figure 16. Typicalgatecharge
0.300
0.275
0.250
0.225
0.200
0.175
0.150
0.125
0.100
0.075
0.050
0.025
0.000
16
14
12
10
8
6
4
2
0
25
0
functionofjunctiontemperature
(inductiveload,V
I
Figure E)
(I
C
T
5
C
=7,5A,r
E
E
E
130V
520V
vj
=15A)
50
off
on
ts
,JUNCTIONTEMPERATURE[°C]
Q
10
GE
G
,GATECHARGE[nC]
75
=39 ,Dynamictestcircuitin
15
CE
100
20
=400V,V
25
IKA15N65F5
125
Rev.1.1,2012-11-09
GE
30
=15/0V,
150
35
175
40