NGTG50N60FLWG ON Semiconductor, NGTG50N60FLWG Datasheet - Page 5

• Manufacturer Part Number: NGTG50N60FLWG
• Description: IGBT Transistors 600V/50A IGBT LPT TO-247
• Manufacturer: ON Semiconductor

1000
0.01
100
2.4
1.8
1.2
0.6
0.1
10
175
7
6
5
4
3
2
1
0
3
0
1
5
1
V
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
V
T
CE
V
I
T
GE
J
R
C
I
GE
J
225
C
= 150°C
g
15
V
V
= 50 A
= 150°C
= 400 V
= 50 A
= 15 V
= 10 W
CE
CE
Figure 14. Switching Loss vs. V
= 15 V
Figure 12. Switching Loss vs. R
C
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Safe Operating Area
dc operation
= 25°C
275
25
R
G
, GATE RESISTOR (W)
10
325
35
50 ms
375
1 ms
45
425
55
100
E
on
100 ms
475
E
65
TYPICAL CHARACTERISTICS
E
on
off
E
CE
G
off
525
75
http://onsemi.com
1000
575
85
5
10000
1000
1000
1000
100
100
100
10
10
10
1
175
1
1
5
1
V
Figure 17. Reverse Bias Safe Operating Area
V
GE
V
T
V
T
R
CE
I
I
GE
J
t
GE
J
C
C
t
t
d(on)
g
d(off)
225
f
t
= 150°C
= 15 V, T
= 150°C
15
t
t
r
= 50 A
V
V
= 50 A
= 400 V
f
r
= 10 W
= 15 V
= 15 V
CE
CE
Figure 15. Switching Time vs. V
Figure 13. Switching Time vs. R
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
275
25
C
R
= 125°C
G
, GATE RESISTOR (W)
10
325
35
375
45
425
55
100
475
65
t
t
d(off)
d(on)
CE
G
525
75
1000
575
85