NGTG50N60FLWG ON Semiconductor, NGTG50N60FLWG Datasheet

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NGTG50N60FLWG

Manufacturer Part Number
NGTG50N60FLWG
Description
IGBT Transistors 600V/50A IGBT LPT TO-247
Manufacturer
ON Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NGTG50N60FLWG
Manufacturer:
ON/安森美
Quantity:
20 000
NGTG50N60FLWG
IGBT
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss.
Features
Typical Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 0
ABSOLUTE MAXIMUM RATINGS
Collector−emitter voltage
Collector current
Pulsed collector current, T
limited by T
Short−circuit withstand time
V
T
Gate−emitter voltage
Power Dissipation
Operating junction temperature
range
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
Low Saturation Voltage using Trench with Field Stop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for High Speed Switching
5 ms Short−Circuit Capability
These are Pb−Free Devices
Power Factor Correction
Solar Inverters
Uninterruptable Power Supply (UPS)
GE
J
≤ +150°C
= 15 V, V
@ T
@ T
@ T
@ T
Jmax
CE
C
C
C
C
Rating
= 100°C
= 25°C
= 100°C
= 25°C
= 400 V,
pulse
Symbol
T
V
V
T
I
t
CM
P
T
SC
SLD
I
CES
stg
GE
C
D
J
−55 to +150
−55 to +150
Value
$20
600
100
200
223
260
50
89
5
1
Unit
ms
°C
°C
°C
W
V
A
A
V
NGTG50N60FLWG
G
C
Device
E
ORDERING INFORMATION
A
Y
WW
G
MARKING DIAGRAM
V
G
http://onsemi.com
CEsat
50 A, 600 V
= Assembly Location
= Year
= Work Week
= Pb−Free Package
G50N60FL
AYWWG
(Pb−Free)
Package
TO−247
= 1.65 V
Publication Order Number:
C
NGTG50N60FLW/D
CASE 340L
E
STYLE 4
TO−247
30 Units / Rail
Shipping

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NGTG50N60FLWG Summary of contents

Page 1

... SLD 1 http://onsemi.com 50 A, 600 1.65 V CEsat TO−247 C CASE 340L E STYLE 4 MARKING DIAGRAM G50N60FL AYWWG A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping NGTG50N60FLWG TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTG50N60FLW/D ...

Page 2

THERMAL CHARACTERISTICS Rating Thermal resistance junction−to−case, for IGBT Thermal resistance junction−to−ambient ELECTRICAL CHARACTERISTICS Parameter STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage Collector−emitter cut−off current, gate− emitter short−circuited Gate leakage current, collector−emitter short−circuited DYNAMIC CHARACTERISTIC ...

Page 3

T = 25° 200 150 100 COLLECTOR−EMITTER VOLTAGE (V) CE Figure 1. Output Characteristics 250 T = −55°C ...

Page 4

off 0.8 0.6 0.4 0 100 T , JUNCTION TEMPERATURE (°C) J Figure 8. Switching Loss vs. Temperature 4 ...

Page 5

V = 400 150° GATE RESISTOR (W) G Figure ...

Page 6

Duty Cycle 20% 0.1 10 0.01 1% Single Pulse 0.001 0.000001 0.00001 0.0001 Figure 18. IGBT Transient Thermal Impedance Figure 19. Test Circuit for Switching Characteristics TYPICAL CHARACTERISTICS R R Junction ...

Page 7

Figure 20. Definition of Turn On Waveform http://onsemi.com 7 ...

Page 8

Figure 21. Definition of Turn Off Waveform http://onsemi.com 8 ...

Page 9

... SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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