IXXH80N65B4 Ixys, IXXH80N65B4 Datasheet - Page 6

• Manufacturer Part Number: IXXH80N65B4
• Description: IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXH80N65B4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.65 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 160 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 625 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247AD-3
• Continuous Collector Current Ic Max: 80 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
240
200
160
120
180
160
140
120
100
80
60
40
20
80
40
0
0
25
3
T
V
t
R
V
t
Fig. 18. Inductive Turn-on Switching Times vs.
Fig. 20. Inductive Turn-on Switching Times vs.
r i
J
r i
CE
CE
G
6
= 150ºC, V
= 3
= 400V
= 400V
Ω
, V
50
9
I
GE
C
GE
= 80A
= 15V
t
t
= 15V
12
d(on)
d(on)
Junction Temperature
T
J
- - - -
Gate Resistance
- - - -
- Degrees Centigrade
15
75
R
G
I
C
- Ohms
18
= 40A
100
21
I
C
I
= 80A
C
= 40A
24
125
27
30
33
150
120
100
80
60
40
20
0
60
55
50
45
40
35
30
25
20
15
160
140
120
100
80
60
40
20
0
40
R
V
t
Fig. 19. Inductive Turn-on Switching Times vs.
r i
G
CE
= 3
45
= 400V
Ω
, V
GE
50
= 15V
t
d(on)
T
J
= 150ºC
Collector Current
55
- - - -
T
J
= 25ºC
I
C
60
- Amperes
IXXH80N65B4
65
70
IXYS REF: IXX_80N65B4(E7) 01-21-13
75
80
55
50
45
40
35
30
25
20
15