IXXH80N65B4 Ixys, IXXH80N65B4 Datasheet
IXXH80N65B4
Specifications of IXXH80N65B4
Related parts for IXXH80N65B4
IXXH80N65B4 Summary of contents
Page 1
... CES CE CES GE = ±20V 0V, V GES 80A 15V, Note 1 CE(sat © 2013 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXXH80N65B4 Maximum Ratings 650 = 1MΩ 650 GE ±20 ±30 160 80 430 = 3Ω 160 G CM ≤ CES = 150°C ...
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... CES 3.77 120 63 1.20 30 127 4. 1.65 0.21 (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXXH80N65B4 TO-247 (IXXH) Outline Max Terminals Gate 3 - Emitted mJ Dim. Millimeter ns Min. Max 4.7 A 2.2 1. 2.2 ...
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... GE 14V 13V 12V 11V 10V 2.5 3 3.5 4 200 180 T = 25ºC J 160 140 120 I = 160A 100 C 80A 40A IXXH80N65B4 Fig. 2. Extended Output Characteristics @ Volts CE Fig. 4. Dependence of V Junction Temperature 2 15V 2 160A 1.8 C 1.6 1 80A 1.2 C 1.0 0.8 I ...
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... C ies 120 100 C oes res Fig. 11. Maximum Transient Thermal Impedance 0.001 Pulse Width - Second IXXH80N65B4 Fig. 8. Gate Charge V = 325V 80A 10mA NanoCoulombs G Fig ...
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... Ω 15V G GE 150 V = 400V 120 CE 100 130 80 110 IXXH80N65B4 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 400V T = 150º Amperes C Fig ...
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... I = 80A 40A 100 125 150 IXXH80N65B4 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on Ω 15V 400V 25º 150º Amperes ...