NGTB15N60S1EG ON Semiconductor, NGTB15N60S1EG Datasheet - Page 5
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NGTB15N60S1EG
Manufacturer Part Number
NGTB15N60S1EG
Description
IGBT Transistors 15A 600V IGBT
Manufacturer
ON Semiconductor
Datasheet
1.NGTB15N60S1EG.pdf
(10 pages)
Specifications of NGTB15N60S1EG
Rohs
yes
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
30 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
47 W
Package / Case
TO-220
Mounting Style
Through Hole
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NGTB15N60S1EG
Manufacturer:
ON Semiconductor
Quantity:
50
35
30
25
20
15
10
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
5
0
0
0
0
8
0
V
V
T
Rg = 22 W
Figure 7. Diode Forward Characteristics
Figure 9. Switching Loss vs. Temperature
J
CE
GE
= 150°C
20
= 400 V
= 15 V
12
0.5
Figure 11. Switching Loss vs. I
T
J
, JUNCTION TEMPERATURE (°C)
V
I
C
40
F
, COLLECTOR CURRENT (A)
, FORWARD VOLTAGE (V)
Eon
Eoff
16
60
1
80
20
T
J
1.5
−40°C
= 25°C
100
24
V
V
I
Rg = 22 W
C
Eoff
TYPICAL CHARACTERISTICS
CE
GE
120
Eon
= 15 A
150°C
= 400 V
= 15 V
2
C
28
140
http://onsemi.com
2.5
160
32
5
1000
1000
100
20
15
10
100
5
0
10
10
1
1
0
8
0
V
V
T
Rg = 22 W
10
Figure 10. Switching Time vs. Temperature
V
V
I
Rg = 22 W
C
J
CE
GE
CE
GE
= 150°C
t
= 15 A
t
20
t
d(on)
t
d(off)
f
r
= 400 V
= 15 V
= 400 V
= 15 V
12
20
Figure 12. Switching Time vs. I
Figure 8. Typical Gate Charge
T
J
, JUNCTION TEMPERATURE (°C)
I
40
C
, COLLECTOR CURRENT (A)
Q
30
G
, GATE CHARGE (nC)
16
60
40
50
20
80
V
60
CES
100
24
= 480 V
70
120
80
t
t
d(on)
d(off)
t
t
C
f
r
28
140
90
100
160
32