NGTB15N60S1EG ON Semiconductor, NGTB15N60S1EG Datasheet - Page 4

• Manufacturer Part Number: NGTB15N60S1EG
• Description: IGBT Transistors 15A 600V IGBT
• Manufacturer: ON Semiconductor

Specifications of NGTB15N60S1EG

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 30 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 47 W
• Package / Case: TO-220
• Mounting Style: Through Hole

3.0
2.5
2.0
1.5
1.0
0.5
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
0
−50
0
0
T
J
= 25°C
−20
V
V
1
1
CE
CE
Figure 1. Output Characteristics
Figure 3. Output Characteristics
T
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
V
J
GE
, JUNCTION TEMPERATURE (°C)
2
2
Figure 5. V
10
= 17 V to 13 V
V
GE
3
3
= 17 V to 13 V
40
CE(sat)
4
4
V
GE
70
= 11 V
5
vs. T
5
V
V
V
V
100
TYPICAL CHARACTERISTICS
GE
GE
GE
GE
J
V
6
GE
6
T
= 9 V
= 9 V
= 7 V
= 7 V
J
= 11 V
= −40°C
I
I
I
I
C
C
C
C
130
= 30 A
= 15 A
= 10 A
= 5 A
http://onsemi.com
7
7
160
8
8
4
10,000
1000
100
60
50
40
30
20
10
60
50
40
30
20
10
10
0
0
0
0
0
T
J
Figure 4. Typical Transfer Characteristics
10
= 150°C
V
V
1
2
CE
CE
Figure 2. Output Characteristics
V
, COLLECTOR−EMITTER VOLTAGE (V)
20
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 6. Typical Capacitance
GE
2
, GATE−EMITTER VOLTAGE (V)
4
30
3
40
6
V
GE
50
4
= 17 V to 13 V
T
8
J
60
= 25°C
5
−40°C
C
C
C
70
ies
oes
V
V
V
10
res
GE
GE
GE
6
= 9 V
= 7 V
= 11 V
80
150°C
12
7
90
100
14
8