IGW50N65F5FKSA1 Infineon Technologies, IGW50N65F5FKSA1 Datasheet
IGW50N65F5FKSA1
Specifications of IGW50N65F5FKSA1
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IGW50N65F5FKSA1 Summary of contents
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IGBT Highspeed5FASTIGBTinTRENCHSTOP IGW50N65F5 650VIGBThighspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl TM 5technology ...
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Highspeed5FASTIGBTinTRENCHSTOP FeaturesandBenefits: HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowQ g •IdealfitwithSICSchottkyDiodeinboostconverters •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ Applications: •Solarconverters •Uninterruptiblepowersupplies •Weldingconverters •Midtohighrangeswitchingfrequencyconverters Packagepindefinition: •Pin1-gate •Pin2&backside-collector •Pin3-emitter KeyPerformanceandPackageParameters Type V CE IGW50N65F5 650V 50A Highspeedswitchingseriesfifthgeneration TM 5technology I V ,T =25° ...
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TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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Maximumratings Parameter Collector-emitter voltage DCcollectorcurrent,limitedbyT T =25°Cvaluelimitedbybondwire C T =100°C C Pulsedcollectorcurrent,t limitedbyT p TurnoffsafeoperatingareaV 650V,T CE Gate-emitter voltage TransientGate-emittervoltage(t p PowerdissipationT =25°C C PowerdissipationT =100°C C Operating junction temperature Storage temperature Soldering temperature, wave soldering 1.6 mm (0.063 ...
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ElectricalCharacteristic,atT =25°C,unlessotherwisespecified vj Parameter DynamicCharacteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case SwitchingCharacteristic,InductiveLoad,atT Parameter IGBTCharacteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy ...
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SwitchingCharacteristic,InductiveLoad,atT Parameter IGBTCharacteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Highspeedswitchingseriesfifthgeneration =150°C vj ...
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DC 0 100 V ,COLLECTOR-EMITTERVOLTAGE[V] CE Figure 1. Forwardbiassafeoperatingarea (D=0,T =25°C,T 175°C; Recommendeduseat ...
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V =20V GE 18V 105 15V 90 12V 75 10V ,COLLECTOR-EMITTERVOLTAGE[V] CE Figure 5. Typicaloutputcharacteristic (T =150°C) vj 2.50 I =12, ...
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G Figure 9. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,T =150°C, =15/0V,I =25A,Dynamictestcircuit Figure E) 6.0 typ. min. 5.5 ...
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E off E 2. 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0. ,GATERESISTOR Figure 13. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,T =150°C, =15/0V,I =25A,Dynamictestcircuit Figure ...
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C iss 1E+4 C oss C rss 1000 100 ,COLLECTOR-EMITTERVOLTAGE[V] CE Figure 17. Typicalcapacitanceasafunctionof collector-emittervoltage (V =0V,f=1MHz) GE Highspeedswitchingseriesfifthgeneration 1 0.1 0.01 0.001 1E-6 1E-5 Figure 18. IGBTtransientthermalresistance (D=t 11 ...
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Highspeedswitchingseriesfifthgeneration PG-TO247-3 12 IGW50N65F5 Rev.1.1,2012-11-09 ...
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Highspeedswitchingseriesfifthgeneration 13 IGW50N65F5 t Rev.1.1,2012-11-09 ...
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RevisionHistory IGW50N65F5 Revision:2012-11-09,Rev.1.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2012-11-09 Preliminary data sheet WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2012InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems ...