VS-GB75YF120N Vishay Semiconductors, VS-GB75YF120N Datasheet - Page 7

• Manufacturer Part Number: VS-GB75YF120N
• Description: IGBT Modules 1200 Volt 75 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-GB75YF120N

• Product Category: IGBT Modules
• Product: IGBT Silicon Modules
• Configuration: Quad
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 100 A
• Maximum Operating Temperature: + 150 C
• Package / Case: ECONO2 4PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Mounting Style: Screw

Revision: 21-Mar-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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For technical questions within your region: [e-mail], [e-mail],
80 V
+
Fig. 21 - Gate Charge Circuit (Turn-Off)
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Fig. 22 - RBSOA Circuit
1K
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
R
g
L
D.U.T.
D.U.T.
L
1000 V
+
-
V
Fig. 25 - Resistive Load Circuit
CC
R
g
D.U.T.
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R =
V
I
CM
CC
+
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Diode clamp/
V
CC
D.U.T.
Fig. 24 - Switching Loss Circuit
- 5 V
Fig. 23 - S.C. SOA Circuit
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Vishay Semiconductors
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D.U.T./
Driver
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Driver
D.U.T.
GB75YF120N
Document Number: 93654
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C
+
-
+
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900 V
V
CC