VS-GB75YF120N Vishay Semiconductors, VS-GB75YF120N Datasheet - Page 3

• Manufacturer Part Number: VS-GB75YF120N
• Description: IGBT Modules 1200 Volt 75 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-GB75YF120N

• Product Category: IGBT Modules
• Product: IGBT Silicon Modules
• Configuration: Quad
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 100 A
• Maximum Operating Temperature: + 150 C
• Package / Case: ECONO2 4PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Mounting Style: Screw

Revision: 21-Mar-13
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case IGBT
Junction to case DIODE
Case to sink, flat, greased surface
Mounting torque (M5)
Weight
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
160
140
120
100
Fig. 2 - Power Dissipation vs. Case Temperature
500
400
300
200
100
80
60
40
20
0
0
Fig. 1 - Maximum DC Collector Current vs.
0
0
www.vishay.com
20
20
40
Case Temperature
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
40
60
I
T
C
60
C
(A)
80
(°C)
100 120 140 160
80
100
R
R
thCS
R
120
thJC
SYMBOL
thJC
(MODULE)
(DIODE)
(IGBT)
3
MIN.
2.7
-
-
-
-
1000
0.01
1000
100
100
0.1
10
10
1
1
www.vishay.com/doc?91000
10
1
TYP.
0.05
170
-
-
-
Fig. 4 - Reverse Bias SOA
T
T
C
J
Fig. 3 - Forward SOA
10
= 150 °C; V
= 25 °C; T
Vishay Semiconductors
100
V
V
[e-mail]
CE
CE
100
MAX.
0.26
1.00
J
3.3
(V)
(V)
GE
 150 °C
-
-
= 15 V
GB75YF120N
1000
Document Number: 93654
1000
10000
10000
UNITS
°C/W
Nm
g