VS-GB75YF120N Vishay Semiconductors, VS-GB75YF120N Datasheet - Page 3
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VS-GB75YF120N
Manufacturer Part Number
VS-GB75YF120N
Description
IGBT Modules 1200 Volt 75 Amp
Manufacturer
Vishay Semiconductors
Datasheet
1.VS-GB75YF120N.pdf
(11 pages)
Specifications of VS-GB75YF120N
Product Category
IGBT Modules
Product
IGBT Silicon Modules
Configuration
Quad
Collector- Emitter Voltage Vceo Max
1200 V
Continuous Collector Current At 25 C
100 A
Maximum Operating Temperature
+ 150 C
Package / Case
ECONO2 4PAK
Maximum Gate Emitter Voltage
+/- 20 V
Mounting Style
Screw
Revision: 21-Mar-13
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case IGBT
Junction to case DIODE
Case to sink, flat, greased surface
Mounting torque (M5)
Weight
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
160
140
120
100
Fig. 2 - Power Dissipation vs. Case Temperature
500
400
300
200
100
80
60
40
20
0
0
Fig. 1 - Maximum DC Collector Current vs.
0
0
www.vishay.com
20
20
40
Case Temperature
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
40
60
I
T
C
60
C
(A)
80
(°C)
100 120 140 160
80
100
R
R
thCS
R
120
thJC
SYMBOL
thJC
(MODULE)
(DIODE)
(IGBT)
3
MIN.
2.7
-
-
-
-
1000
0.01
1000
100
100
0.1
10
10
1
1
www.vishay.com/doc?91000
10
1
TYP.
0.05
170
-
-
-
Fig. 4 - Reverse Bias SOA
T
T
C
J
Fig. 3 - Forward SOA
10
= 150 °C; V
= 25 °C; T
Vishay Semiconductors
100
V
V
DiodesEurope@vishay.com
CE
CE
100
MAX.
0.26
1.00
J
3.3
(V)
(V)
GE
150 °C
-
-
= 15 V
GB75YF120N
1000
Document Number: 93654
1000
10000
10000
UNITS
°C/W
Nm
g