VS-GA75TS120UPBF Vishay, VS-GA75TS120UPBF Datasheet - Page 7

• Manufacturer Part Number: VS-GA75TS120UPBF
• Description: IGBT Modules 110 Amp 1200 Volt Half-Bridge
• Manufacturer: Vishay

Specifications of VS-GA75TS120UPBF

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 110 A
• Maximum Operating Temperature: + 150 C
• Package / Case: INT-A-PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Factory Pack Quantity: 15

ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
Document Number: 94427
Revision: 03-May-10
Dimensions
50 V
* Driver same type as D.U.T.; V
Note: Due to the 50 V power supply, pulse width and inductor
Fig. 18 - Clamped Inductive Load Test Circuit
will increase to obtain rated I
6000 µF
100 V
Device code
1000 V
C
1
2
3
4
5
6
7
8
= 80 % of V
G
1
d
L
For technical questions, contact:
V
-
-
-
-
-
-
-
-
"Half-Bridge" IGBT INT-A-PAK
C
*
(Ultrafast Speed IGBT), 75 A
A
CE
2
Insulated gate bipolar transistor (IGBT)
Generation 4, IGBT silicon, DBC construction
Current rating (75 = 75 A)
Circuit configuration (T = Half-bridge)
Package indicator (INT-A-PAK)
Voltage rating (120 = 1200 V)
Speed/type (U = Ultrafast)
PbF = Lead (Pb)-free
(max)
LINKS TO RELATED DOCUMENTS
D.U.T.
75
3
6
7
4
5
T
4
3
2
S
5
[e-mail]
1
0 - 600 V
120
6
Fig. 19 - Pulsed Collector Current Test Circuit
U
7
Vishay High Power Products
www.vishay.com/doc?95173
PbF
8
GA75TS120UPbF
R
L
= =
4 x I
www.vishay.com
600 V
C
at 25 °C
7