VS-GA75TS120UPBF Vishay, VS-GA75TS120UPBF Datasheet - Page 5

• Manufacturer Part Number: VS-GA75TS120UPBF
• Description: IGBT Modules 110 Amp 1200 Volt Half-Bridge
• Manufacturer: Vishay

Specifications of VS-GA75TS120UPBF

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 110 A
• Maximum Operating Temperature: + 150 C
• Package / Case: INT-A-PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Factory Pack Quantity: 15

Document Number: 94427
Revision: 03-May-10
1000
200
150
100
100
100
70
60
50
40
30
20
10
50
10
0
0
1
0.5
0
0
Fig. 13 - Typical Forward Voltage Drop vs.
R
R
T
V
V
V
T
V
V
Safe operating area
C
G1
G2
CC
GE
Fig. 11 - Typical Switching Losses vs.
J
GE
CE
CE
200
20
= 125 °C
= 125 °C
V
= 15 Ω
= 0 Ω
= 720 V
= 15 V
1.0
measured at terminal (peak voltage)
= 20 V
Instantaneous Forward Current
- Collector to Emitter Voltage (V)
F
T
Collector to Emitter Current
Fig. 12 - Reverse Bias SOA
J
- Forward Voltage Drop (V)
I
C
= 125 °C
40
400
- Collector Current (A)
1.5
60
600
2.0
80
800
T
J
100
= 25 °C
2.5
1000 1200
For technical questions, contact:
120
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 75 A
3.0
140
1400
160
3.5
[e-mail]
16 000
12 000
8000
4000
160
250
200
150
100
200
120
80
40
Fig. 15 - Typical Reverse Recovery Time vs. dI
0
0
500
500
500
Fig. 16 - Typical Recovery Current vs. dI
Fig. 14 - Typical Stored Charge vs. dI
V
T
T
R
J
J
I
I
I
= 125 °C
= 25 °C
= 720 V
F
F
F
Vishay High Power Products
= 150 A
= 75 A
= 37 A
1000
1000
1000
dI
dI
dI
F
F
F
/dt (A/µs)
/dt (A/µs)
/dt (A/µs)
GA75TS120UPbF
V
T
T
V
T
T
J
J
R
J
J
R
= 125 °C
= 25 °C
= 720 V
= 125 °C
= 25 °C
= 720 V
1500
1500
1500
I
I
I
I
I
I
F
F
F
F
F
F
= 150 A
= 75 A
= 37 A
= 150 A
= 75 A
= 37 A
www.vishay.com
F
/dt
F
/dt
2000
2000
2000
F
/dt
5