VS-GB50YF120N Vishay Semiconductors, VS-GB50YF120N Datasheet - Page 8

• Manufacturer Part Number: VS-GB50YF120N
• Description: IGBT Modules 1200 Volt 50 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-GB50YF120N

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Quad
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 66 A
• Maximum Operating Temperature: + 150 C
• Package / Case: ECONO2 4PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Mounting Style: Screw
• Factory Pack Quantity: 6

ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
Revision: 21-Mar-13
Dimensions
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
Device code
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
40
36
37
41
1
2
3
4
5
6
7
G
1
QB1
QB2
-
-
-
-
-
-
-
48 49
46 47
B
2
Insulated gate bipolar transistor (IGBT)
B = IGBT Generation 5 NPT
Current rating (50 = 50 A)
Circuit configuration (Y = Fourpack)
Package indicator (F = ECONO2)
Voltage rating (120 = 1200 V)
Speed/type (N = Ultrafast with reduced diode, speed 8 to 60 kHz)
LINKS TO RELATED DOCUMENTS
50
3
5
6
7
Y
4
8
F
5
32
28
29
33
120
6
www.vishay.com/doc?91000
QB3
QB4
www.vishay.com/doc?95539
N
7
21 22
23 24
Vishay Semiconductors
15
16
17
[e-mail]
GB50YF120N
Document Number: 93653