VS-GB50YF120N Vishay Semiconductors, VS-GB50YF120N Datasheet - Page 10

• Manufacturer Part Number: VS-GB50YF120N
• Description: IGBT Modules 1200 Volt 50 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-GB50YF120N

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Quad
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 66 A
• Maximum Operating Temperature: + 150 C
• Package / Case: ECONO2 4PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Mounting Style: Screw
• Factory Pack Quantity: 6

DIMENSIONS in millimeters
Revision: 21-Mar-13
0.8 ± 0.03
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Z2:1
For technical questions within your region: [e-mail], [e-mail],
0.8 ± 0.03
0.5
X2:1
www.vishay.com
Ø 5.5 ± 0.05
13.2 ± 0.15
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
17 ± 0.5
1.15
- 0.02
- 0.06
Y2:1
ECONO2 4PACK N Series
0.85
Z
41
39.49
Y
40
5
6 7
22.86
19.05
3.81
19.05
15.24
11.43
37 36
7.62
107.8 ± 0.2
105 ± 0.1
93 ± 0.15
7.62
11.43
1
19.05
33 32
22.86
22.86
26.67
39.49
15
29 28
16 17
www.vishay.com/doc?91000
Ø 2.2
Ø 2.6
Ø 4.5
Ø 6 (x 4)
Outline Dimensions
Vishay Semiconductors
[e-mail]
20.5
Document Number: 95539
+ 10
- 0.5
7.5 - 0.3